US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on May 27 for "Method for forming a first and a second transistors array having plurality of first and semiconductor pillars" (Chinese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,484, issued on May 27, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method for forming a first and a second transistors array having plurality of first and semiconductor pillars" was invented by Guangsu Shao (Hefei, China) and Deyuan Xiao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments provide a semiconductor structure and a fabrication method. The method includes: providing a semiconductor substrate, the semiconductor substrate being provided with a plurality of first bit lines extending along a first direction; forming a first transistor array on the semiconductor substrate, the first transistor array...