US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on May 27 for "Memory device, and manufacturing method and driving method thereof" (Chinese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,503, issued on May 27, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Memory device, and manufacturing method and driving method thereof" was invented by Shuai Guo (Hefei, China), Mingguang Zuo (Hefei, China) and Shijie Bai (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to the technical field of semiconductor manufacturing, and in particular, to a memory device, and a manufacturing method and a driving method thereof. The memory device includes: a substrate; a stacked structure, where the stacked structure includes a first gate layer, a second gate layer, and interlayer isolation layer...