US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on May 27 for "Electrostatic protection circuit for controlling a secondary monitoring unit by a control circuit" (Chinese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,316,106, issued on May 27, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Electrostatic protection circuit for controlling a secondary monitoring unit by a control circuit" was invented by Ling Zhu (Hefei, China) and Kai Tian (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "An electrostatic protection circuit for a chip including a power supply pad and a ground pad, the electrostatic protection circuit includes: a monitoring assembly, configured to generate a trigger signal when an electrostatic pulse is present on the power supply pad; a discharge transistor connected between the power pad and the ground pad and configur...