US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on May 27 for "Decoding drive circuit and method therefor, word line decoding circuit and semiconductor memory" (Chinese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,554, issued on May 27, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Decoding drive circuit and method therefor, word line decoding circuit and semiconductor memory" was invented by Weibing Shang (Hefei, China), Xianjun Wu (Hefei, China) and Minghao Li (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A decoding drive circuit includes at least one decoding driver. The decoding driver includes a first-stage drive circuit and a second-stage drive circuit. Herein, the first-stage drive circuit is configured to receive an enabling control signal, a decoding input signal and a drive control signal, and generate a first dri...