US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on May 27 for "Amplification circuit, control method, and memory" (Chinese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,555, issued on May 27, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Amplification circuit, control method, and memory" was invented by Weibing Shang (Hefei, China) and Hongwen Li (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "An amplification circuit includes a sense amplification circuit, including a read node SABL, a complementary read node SABLB, a first node PCS, and a second node NCS; an isolation circuit, coupled to the SABL, the SABLB, a hit line BL, and a complementary hit line BLB, configured to: in a sense amplification stage, couple the SABL to the BL and couple the BLB to the SABLB; an offset cancellat...