US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on May 20 for "Semiconductor structure and method for manufacturing semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,309,998, issued on May 20, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for manufacturing semiconductor structure" was invented by Deyuan Xiao (Hefei, China), Yi Jiang (Hefei, China), Guangsu Shao (Hefei, China), Xingsong Su (Hefei, China) and Yunsong Qiu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and a method for manufacturing a semiconductor structure are provided. The method for manufacturing the semiconductor structure includes: a substrate is provided: a plurality of semiconductor channels arrayed in a first direction and a second direction are form...