US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on May 20 for "Semiconductor structure and method for manufacturing same" (Chinese Inventor)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,008, issued on May 20, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for manufacturing same" was invented by Li Ding (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and a method for manufacturing the semiconductor structure are provided. The semiconductor structure includes: a substrate including a first doped region; a first isolation structure located in the first doped region, a depth of the first isolation structure being greater than that of the first doped region; a first gate structure located on the surface of the substrate of the first doped regio...