US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on May 20 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,309,999, issued on May 20, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and manufacturing method thereof" was invented by Youming Liu (Hefei, China) and Deyuan Xiao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to the technical field of semiconductors, and provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a substrate; a memory cell array, located on the substrate, the memory cell array includes a plurality of transistor units, each of the transistor units includes a first transistor and a second transisto...