US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on May 20 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,030, issued on May 20, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and manufacturing method thereof" was invented by Xiaoguang Wang (Hefei, China), Dinggui Zeng (Hefei, China), Huihui Li (Hefei, China) and Kanyu Cao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a plurality of memory cells alternately arranged on a substrate, the memory cell including an odd number of vertical transistors, a connection pad connected to one end of each of the odd number of vert...