US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on May 20 for "Semiconductor structure and formation method thereof, and memory" (Chinese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,309,992, issued on May 20, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and formation method thereof, and memory" was invented by Guangsu Shao (Hefei, China) and Deyuan Xiao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments relate to a semiconductor structure and a formation method. The formation method includes: forming a first active layer on a side of the substrate; forming a first word line in each of the plurality of active areas; forming a first bit line and a conductive contact plug on a top of the first active layer; forming a gate dielectric layer on a side of the first active...