US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on May 20 for "Semiconductor structure and fabrication method thereof" (Chinese Inventor)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,007, issued on May 20, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and fabrication method thereof" was invented by Chao Lin (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments relate to a semiconductor structure and a fabrication method thereof. The semiconductor structure has an array region and a peripheral region, and includes: a semiconductor substrate; a memory array structure positioned above the semiconductor substrate in the array region; a peripheral circuit structure positioned above the semiconductor substrate in the peripheral region; and a conductive connection structur...