US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on May 20 for "Semiconductor device and method of making the same" (Chinese Inventor)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,003, issued on May 20, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor device and method of making the same" was invented by Pingheng Wu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The method making a semiconductor device includes: providing a substrate having a shallow trench isolation region and an active region, patterned with trenches; and forming a word line conductive layer partly located in the trench; forming a first insulating film on the word line conductive layer, and forming an air gap structure in the trench in the first insulating film by controlling the step coverage of the first insul...