US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on May 20 for "Method for obtaining parameters of semiconductor structure, method for obtaining detection standard and detection method" (Chinese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,308,295, issued on May 20, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method for obtaining parameters of semiconductor structure, method for obtaining detection standard and detection method" was invented by Xinran Liu (Hefei, China), Chunyang Wang (Hefei, China) and Changli Zhu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure provide a method for obtaining parameters of a semiconductor structure, a method for obtaining a detection standard and a detection method. The method for obtaining parameters of a semiconductor structure includes: obtaining a semiconductor structure, the se...