US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on May 20 for "Anti-fuse storage layout and circuit thereof, and anti-fuse memory and design method thereof" (Chinese Inventor)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,308,316, issued on May 20, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Anti-fuse storage layout and circuit thereof, and anti-fuse memory and design method thereof" was invented by Rumin Ji (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments provide an anti-fuse storage layout and a circuit thereof, and an anti-fuse memory and a design method thereof. The anti-fuse storage layout includes: active regions extending along a first direction and being discretely arranged along a second direction, each of the active regions including at least two memory cell regions arranged along the first direction, each of the a...