US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on May 20 for "Address refresh circuit and method, memory, and electronic device" (Chinese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,308,065, issued on May 20, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Address refresh circuit and method, memory, and electronic device" was invented by Jixing Chen (Hefei, China) and Enpeng Gao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "An address refresh circuit and method, a memory, and an electronic device are provided. The address refresh circuit includes a selection circuit and a decoding circuit. The selection circuit is configured to acquire a strobe signal, a redundancy address signal and a normal address signal, and select, within each of a first pulse duration and a second pulse duration and based on ...