ALEXANDRIA, Va., June 12 -- United States Patent no. 12,301,237, issued on May 13, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).
"Voltage conversion circuit and memory" was invented by Kangling Ji (Hefei, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A voltage conversion circuit and a memory are provided. The voltage conversion circuit includes a driving circuit and a receiving circuit. The driving circuit is powered by a first voltage, and outputs a first signal at an output end, a voltage of a high level of the first signal being less than the first voltage. The receiving circuit is powered by the first voltage, receives the first signal at a first input end, and receives a sampl...