US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on May 13 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,634, issued on May 13, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and manufacturing method thereof" was invented by Kui Zhang (Hefei, China) and Zhan Ying (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to the technical field of semiconductors, and provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a substrate; a first transistor, located on the substrate; a second transistor, located above the first transistor; and a gate structure, the gate structure including a first gate layer and a second gate lay...