US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on May 13 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,744, issued on May 13, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and manufacturing method thereof" was invented by Deyuan Xiao (Hefei, China), Guangsu Shao (Hefei, China), Yunsong Qiu (Hefei, China), Yi Jiang (Hefei, China) and Youming Liu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a base, including a semiconductor substrate, the semiconductor substrate is provided with first trenches extending along a first direction and second trenches extending alon...