US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on May 13 for "Semiconductor memory structure" (Chinese Inventor)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,549, issued on May 13, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor memory structure" was invented by Shuai Guo (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure, a forming method thereof and a memory are provided. Wherein the semiconductor structure includes: a substrate; a bit line layer, located in the substrate; a word line stack layer, located on the substrate, wherein the word line stack layer includes a word line layer; and a gap, located between the bit line layer and the word line layer."

The patent was filed on April 29, 2022, under Application No. 17/661,349.

*For ...