US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on May 13 for "Method for manufacturing semiconductor structure, and semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,492, issued on May 13, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method for manufacturing semiconductor structure, and semiconductor structure" was invented by Mengmeng Wang (Hefei, China), Hsin-Pin Huang (Hefei, China) and Qiang Zhang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor structure includes: providing a substrate, a bottom protecting wall being formed in the substrate; forming a mask layer on the substrate; forming a groove in the mask layer, a non-zero angle existing between a sidewall of the groove and a sidewall of the bottom protecting wall, and the botto...