US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on May 13 for "Method for forming bit line contact structure and semiconductor structure" (Chinese Inventor)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,555, issued on May 13, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method for forming bit line contact structure and semiconductor structure" was invented by Xiayu Shi (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a method for forming a bit line contact structure, including: successively disposing a first mask layer, a second mask layer, and a photoresist on a surface of a substrate on which word lines and a protection layer are provided, patterning the photoresist; successively etching the second and the first mask layers with the patterned photoresist to form a first opening; disposing a sacrificia...