US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on May 13 for "Method for fabricating semiconductor structure, and semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,502, issued on May 13, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method for fabricating semiconductor structure, and semiconductor structure" was invented by Chenming Xu (Hefei, China), Hongbo Lin (Hefei, China) and He Wu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments relate to the field of semiconductor manufacturing technology, and more particularly, to a method for fabricating a semiconductor structure, and a semiconductor structure. The method for fabricating a semiconductor structure includes: providing a substrate covered with a conductive layer; removing part of the conductive layer by dry et...