US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on May 13 for "Data transmission circuit, method and semiconductor memory" (Chinese Inventor)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,308, issued on May 13, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Data transmission circuit, method and semiconductor memory" was invented by Zhonglai Liu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A data transmission circuit, a data transmission method and a semiconductor memory are provided. The data transmission circuit includes a control circuit and a processing circuit. The control circuit is configured to receive a first enable signal, and control the processing circuit to be in an operating state when the first enable signal is in an active state, and control the processing circuit to be in a non-oper...