US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on March 4 for "Semiconductor structure and method for manufacturing semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., March 5 -- United States Patent no. 12,243,779, issued on March 4, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and method for manufacturing semiconductor structure" was invented by Shuangshuang Wu (Hefei, China) and Tzung-Han Lee (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor structure, including: providing a base; forming a Through Silicon Via (TSV) in the base, with a depth of the TSV being less than a thickness of the base; and forming a liner layer on a sidewall and the bottom of the TSV, and forming a conductive layer in the TSV, the liner layer including a polish-stop layer."

The pa...