US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on March 4 for "Semiconductor device and a method making the same" (Chinese Inventor)

ALEXANDRIA, Va., March 5 -- United States Patent no. 12,245,422, issued on March 4, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor device and a method making the same" was invented by Shibing Qian (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present application provide a semiconductor structure and a method for manufacturing the same. The semiconductor structure includes: a substrate, with word lines arranged at intervals in the substrate, and trenches between adjacent word lines; a bit line contact layer, wherein the bottom surface of the bit line contact layer is in contact with the bottom surface of the trench, and the bit line contact l...