US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on March 4 for "Method for preparing semiconductor device" (Chinese Inventors)

ALEXANDRIA, Va., March 5 -- United States Patent no. 12,243,743, issued on March 4, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method for preparing semiconductor device" was invented by Susheng Chang (Hefei, China), Tianlei Mu (Hefei, China) and Bin Yang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for preparing a semiconductor device is provided. The method for preparing the semiconductor device includes: providing a substrate, and forming a first dielectric layer on one side of the substrate, where the substrate includes an array area and a peripheral area arranged outside of the array area; forming an initial mask pattern on one side of the first dielectric...