US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on March 25 for "Semiconductor structure preparation method, semiconductor structure and semiconductor memory" (Chinese Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,262,525, issued on March 25, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure preparation method, semiconductor structure and semiconductor memory" was invented by Xiaojie Li (Hefei, China) and Pan Yuan (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a method for preparing a semiconductor structure, a semiconductor structure and a semiconductor memory. The method includes the following operations. An initial semiconductor structure is formed on a substrate. The initial semiconductor structure is etched to form an array area structure and a peripheral area structure including a peripher...