US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on March 25 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,195, issued on March 25, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and manufacturing method thereof" was invented by Yulei Wu (Hefei, China) and Bin Yang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a manufacturing method of a semiconductor structure, and a semiconductor structure. The manufacturing method of a semiconductor structure includes: forming a plurality of cylindrical capacitors in an initial structure; removing part of the initial structure to form trenches, the trenches expose partial sidewalls of the cylindrical capacitors and a substrate ...