US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on March 25 for "Semiconductor structure and forming method thereof" (Chinese Inventor)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,262,530, issued on March 25, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and forming method thereof" was invented by Shih-Hung Lee (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor structure and a forming method thereof, including: providing a substrate and a plurality of discrete bit line structures, the bit line structures being located on the substrate, capacitor contact windows being provided between adjacent bit line structures; forming first isolation layers, the first isolation layers covering sidewalls of the bit line structures; forming a ...