ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,109, issued on March 25, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).
"Semiconductor structure" was invented by Kun Weng (Hefei, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a plurality of metal layers and a substrate. The plurality of metal layers are provided with a plurality of virtual metal blocks and at least one signal line. A first projection of a first virtual metal block on the substrate is a polygon, the first projection has a plurality of effective sides opposite to a second projection of a target signal line on the substrate, and differences from the plurality of effective ...