US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on March 25 for "Semiconductor device, manufacturing method of semiconductor device, and semiconductor memory device" (Chinese Inventor)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,262,529, issued on March 25, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor device, manufacturing method of semiconductor device, and semiconductor memory device" was invented by Xiaobo Mei (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor substrate, a word line trench and a word line structure. The word line trench includes a first word line trench and a second word line trench. The word line structure includes a first word line structure part and a second word line structure part connected to each other. The first word line structure part is formed in the fir...