US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on March 25 for "Method for fabricating semiconductor structure, semiconductor structure, and memory" (Chinese Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,262,522, issued on March 25, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method for fabricating semiconductor structure, semiconductor structure, and memory" was invented by Shuai Guo (Hefei, China) and Mingguang Zuo (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments provide method for fabricating a semiconductor structure, and a semiconductor structure. The method includes: providing a substrate, a thin-film stack structure being formed on the substrate; forming a first groove and a second groove in the thin-film stack structure, and forming write transistors in the first groove, the second groove extending...