US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on March 25 for "Memory cell structure, memory array structure, semiconductor structure having a capacitor structure surrounded on the outer side of the word line" (Chinese Inventor)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,262,531, issued on March 25, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Memory cell structure, memory array structure, semiconductor structure having a capacitor structure surrounded on the outer side of the word line" was invented by Guangsu Shao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a memory cell structure, a memory array structure, a semiconductor structure and a manufacturing method thereof. The memory cell structure includes: a substrate, an active region, a word line structure, an insulating dielectric layer, and a capacitor structure. The substrate has a bit line structure therein, and ...