US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on March 25 for "In-memory computing circuit and method, and semiconductor memory" (Chinese Inventor)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,260,900, issued on March 25, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"In-memory computing circuit and method, and semiconductor memory" was invented by Heng-Chia Chang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "An in-memory computing circuit includes an initial computing circuit and a target computing circuit. Herein, the initial computing circuit is configured to perform first operation processing on first data and second data to output a first operation result, and perform second operation processing on the first data and the second data to output a second operation result. The target computing circuit is c...