US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on March 25 for "Bonding structure and method for forming the same" (Chinese Inventor)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,137, issued on March 25, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Bonding structure and method for forming the same" was invented by Ling-Yi Chuang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure is provided. The semiconductor structure includes a first substrate, and a first bonding structure and a first conductive via which are formed in the first substrate. The first bonding structure includes a first metal layer and a second metal layer with a melting point lower than a melting point of the first metal layer. The first metal layer includes a first surface and a second surface arra...