US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on March 18 for "Test circuit, test method and memory" (Chinese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,254,941, issued on March 18, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Test circuit, test method and memory" was invented by Jianyong Qin (Hefei, China), Jianni Li (Hefei, China) and Zhonglai Liu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A test circuit includes first integration circuit configured to receive first test signal and integrate first test signal to output first integrated signal; second integration circuit configured to receive second test signal and integrate second test signal to output second integrated signal, where first test signal and second test signal are signals inverted with respect to ...