US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on March 18 for "Sense amplifier circuit architecture" (Chinese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,254,921, issued on March 18, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Sense amplifier circuit architecture" was invented by Guifen Yang (Hefei, China) and Sungsoo Chi (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A sense amplifier circuit architecture includes a first NMOS layout, a second NMOS layout, a first PMOS layout, a second PMOS layout, a first processing structure layout and a second processing structure layout. The first NMOS layout includes first N-type active layers and first gate layers discretely arranged on the first N-type active layers. The second NMOS layout includes second N-type active layers...