US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on March 18 for "Semiconductor structure having two N-type devices and two P-type devices and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,256,568, issued on March 18, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure having two N-type devices and two P-type devices and manufacturing method thereof" was invented by Xiaojie Li (Hefei, China) and Mengmeng Yang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A manufacturing method of a semiconductor structure includes the following operations. A substrate is provided, which includes a first N region, a first P region, a second N region and a second P region adjacently arranged in sequence. A gate dielectric layer, a first barrier layer, a first work function layer and a second barrier lay...