US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on March 18 for "Semiconductor structure and manufacturing method thereof" (Chinese Inventor)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,125, issued on March 18, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure and manufacturing method thereof" was invented by Chih-Cheng Liu (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a substrate, a via, a conductive pillar, and a core layer. The via is located in the substrate. The conductive pillar is located in the via, and the conductive pillar is provided with a groove extended inwards from an upper surface of the conductive pillar. The core layer is located in the groove, a Young modulus of the core layer is less than that of the conductive pillar." ...