US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on March 18 for "Semiconductor structure, method of reading data from semiconductor structure, and method of writing data into semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,254,912, issued on March 18, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure, method of reading data from semiconductor structure, and method of writing data into semiconductor structure" was invented by Jiefang Deng (Hefei, China), Wei Chang (Hefei, China), Huihui Li (Hefei, China), Xiang Liu (Hefei, China) and Jong Sung Jeon (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor structure, a method of reading data from the semiconductor structure, and a method of writing data into the semiconductor structure. The semiconductor structure includes: a memory...