US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on March 18 for "Semiconductor device and method for forming semiconductor device" (Chinese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,256,535, issued on March 18, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor device and method for forming semiconductor device" was invented by Sheng Li (Hefei, China) and Xing Jin (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method for forming the semiconductor device are provided. The method includes the following operations. A semiconductor substrate is provided, the semiconductor substrate includes multiple bit line structures disposed at intervals along a first direction; for each of the multiple bit line structures, surfaces of the bit line structure are filled with a ...