US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on March 18 for "Method of manufacturing semiconductor structure, semiconductor structure and memory" (Chinese Inventor)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,256,530, issued on March 18, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method of manufacturing semiconductor structure, semiconductor structure and memory" was invented by Kui Zhang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure relate to the field of semiconductors, and in particular to a method of manufacturing a semiconductor structure, a semiconductor structure and a memory. The method of manufacturing a semiconductor structure includes: forming a first semiconductor layer on a substrate, the first semiconductor layer including a first trench region and a to-be-doped regio...