US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on March 18 for "Method of forming photoresist pattern and projection exposure apparatus" (Chinese Inventor)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,253,804, issued on March 18, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method of forming photoresist pattern and projection exposure apparatus" was invented by Kanyu Cao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a method of forming a photoresist pattern and a projection exposure apparatus. The forming method includes: providing a photoresist layer, and disposing the photoresist layer under a projection objective, wherein a light refracting plate is located between the photoresist layer and the projection objective; and performing an exposure processing on the photoresist layer ...