US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on March 18 for "Method for forming buried bit lines in the bit line trenchs" (Chinese Inventor)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,256,531, issued on March 18, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Method for forming buried bit lines in the bit line trenchs" was invented by Kui Zhang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and a forming method thereof are provided. The method for forming a semiconductor structure includes providing a base including a semiconductor substrate and a well region located on a surface of the semiconductor substrate, in which the well region includes a plurality of active pillar columns arranged at intervals along a first direction, and each of the active pillar columns includes ...