US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on March 18 for "Memory structure and memory device" (Chinese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,254,939, issued on March 18, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Memory structure and memory device" was invented by Weibing Shang (Hefei, China) and Hongwen Li (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory structure of an integrated circuit includes a plurality of memory arrays arranged in parallel along the first direction and extending along the second direction, a sensitivity amplifier array extending along the second direction is arranged between every two memory arrays, and the sensitivity amplifier array includes an odd-numbered sensitivity amplifier array and an even-numbered sensitivity am...