US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on March 18 for "Control method, semiconductor memory, and electronic device" (Chinese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,254,942, issued on March 18, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Control method, semiconductor memory, and electronic device" was invented by Yoonjoo Eom (Hefei, China), Lin Wang (Hefei, China), Zhiqiang Zhang (Hefei, China) and Yuanyuan Gong (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A control method includes: decoding a third Operand (OP) in a third Mode Register (MR) and a fourth OP in a first MR; and in response to the semiconductor memory being in a preset test mode, controlling, in a case where the third OP meets a first decoding condition, the impedance of a Data Mask (DM) pin to be a first value;...