ALEXANDRIA, Va., March 19 -- United States Patent no. 12,256,538, issued on March 18, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Anhui, China).
"Anti-fuse unit structure and anti-fuse array" was invented by Xiong Li (Hefei, China) and Peng Feng (Hefei, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "An anti-fuse unit structure includes a substrate, an anti-fuse device, and a select transistor. The anti-fuse device is formed in the substrate and comprises a first gate structure, a first source doped region, and a first drain doped region, wherein the first gate structure is electrically connected to the first drain doped region. The select transistor is formed in the substrate and matched with th...