US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on June 3 for "Semiconductor structure, method for forming same, and wafer on wafer bonding method" (Chinese Inventor)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,322,654, issued on June 3, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Semiconductor structure, method for forming same, and wafer on wafer bonding method" was invented by Yuanhao Gao (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming the semiconductor structure includes: a wafer in which a semiconductor device is formed is provided; a blind hole is formed in the wafer; a first metal material is deposited in the blind hole to form a through silicon via; and a first metal material deposited on a surface of the wafer is removed, and the surface of the wafer is planarized."

The patent was filed on Aug. ...