US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on June 3 for "Refresh circuit and memory" (Chinese Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,322,430, issued on June 3, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).

"Refresh circuit and memory" was invented by Xianlei Cao (Hefei, China) and Xian Fan (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A preprocessing module receives a word line activation command a clock signal and outputs a word line address corresponding to a current word line activation command as a word line address signal when a count value reaches a preset value. An address processing module counts all received word line address signals and outputs a word line address signal with the largest number of occurrences as a row hammer address. A firs...