ALEXANDRIA, Va., June 4 -- United States Patent no. 12,322,431, issued on June 3, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei, China).
"Refresh address generation circuit and method, memory, and electronic device" was invented by Yinchuan Gu (Hefei, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A refresh address generation circuit includes: a refresh control circuit configured to sequentially receive first refresh commands and perform first refresh operations respectively, output a first clock signal when the number of the first refresh operations is less than a preset value or output a second clock signal when the number of the first refresh operations is equal to the preset value n, whe...